Maskless Lithography
Features
High Speed patterning speed > 2000mm2/min Laser Wavelength: 405nm (h- line) Laser power: 300mW/cm2 1µm resolution (resist and substrate dependent) Stitching and overlay accuracy: +/-1µm Automatic and manual alignment Write field size (shot): 1024 x 768µm Sample size: from 5x5mm to 4-inch wafer Files supported GDSII or DXF (with data conversion) UV Resists available: - AZ5214E (Japanese) - OFPR300 (12 or 30Cp) - AR-P
- MaP1275HV - mr-DWL - S1813 - SU8-2000 series More resists available on request.