Dr. Kirill Mitrofanov graduated from Ryazan State Radio Engineering Institute in 2008. In 2012 he defended his thesis on the topic of the chalcogenide semiconductors phase change process. From August 2012 he began to work as a postdoctoral fellow in the Functional Materials Group (currently Systematic Materials Design Group) of the Nanoelectronics Research Institute in the National Institute for Advanced Industrial Science and Technology (AIST) in Tsukuba, Japan. Dr. Mitrofanov carried out multiple studies in x-ray absorption near edge structure and extended x-ray absorption fine structure experimental techniques within experimental proposals at SPring-8 synchrotron (Japan) on such topics as resistivity drift in phase-change memory and atomic and the electronic structure of topological crystalline insulators. Dr. Mitrofanov also studied structural evolution processes in chalcogenide phase-change materials by means of ultrafast time-resolved diffraction using a hard x-ray free electron laser. During his work as a research staff in AIST, Dr. Mitrofanov worked on the fabrication and optimization of phasechange random access memory based on Ge-Sb-Te compounds and interfacial phasechange memory devices based on chalcogenide superlattices utilizing electric and magnetic fields induced switching phenomena. From 2020 he joined the Organic Optoelectronics Unit team in OIST (Okinawa, Japan).
Email: kirill.mitrofanov at oist.jp