Electron Beam Lithography
Features
ZrO/W thermal field emitter Fixed acceleration voltage: 50 kV (lower voltage available 20 or 30kV)
Beam current: 10pa - 2nA 2nm minimum diameter spot Min. linewidth: 10nm (75µm field at 50kV) Stitching and overlay accuracy: <50nm Write field available: 75µm, 150µm, 300µm and 600µm Stage mouvement range : X: 100mm Y: 110mm Z: 5mm Sample size: from 5x5mm to 4-inch wafer Files supported GDSII or DXF (with data conversion)
Electron beam resists available: - PMMA 950k A4 - MMA - CSAR 62 (AR-P 6200) - AR-N 7511
More resists available on request.