FIB-SEM Dual Beam

The FIB-SEM dual beam system combines two powerful techniques: focused ion beam (FIB) milling and scanning electron microscopy (SEM) imaging. This system allows for both high-resolution imaging and precise material modification on a nanometer scale.

It is used to carve complex shapes from bulk materials at precise locations for chemical and structural evaluation by STEM, 3D Atom Probe, etc., it can be a standalone instrument for orientation imaging and 3D tomography. The FIB instrument enables sampling precise regions inaccessible by other methods and can penetrate fragile materials including those that are extremely brittle or soft. The instrument also will machine samples for chemical, electronic, and mechanical testing.

Reservations & Training

Inventory ID:

ENG-N21

Manufacturer:

FEI (Thermo Fisher)

Model:

Helios G3 UC

Year Installed:

2015

Features

Secondary electron (SE) imaging Backscattered electron (BSE) imaging Gas Injection System – platinum and carbon deposition Ion optics: Range acceleration voltage Ga ion: 500V to 30 kV Probe current: 0.1pA to 65nA 4.0nm resolution at 30kV Electron optics: Range SEM acceleration voltage: 350V to 5 kV Probe current: 0.8pA to 100nA 1.4nm resolution at 1kVPatterning: Maximum resolution: 64k x 64k Maximum pattern size: 16 mil. pixels per single pattern Minimum Dwell Time: 25 ns/pixel Maximum Dwell Time: 25 ms/pixel Complex milling patterns through Bitmap import GDSII file format support Feature sizes down to 20-30 nm (sample dependent) Maximum sample size: 110mm diameter Maximum sample thickness: 61mm incl. sample holder Stage tilt range -15 to +90°