Inductively Coupled Plasma – Reactive Ion Etching and Chemical Vapor deposition (ICP- RIE/CVD)

The PlasmaLab 100 is an inductively coupled plasma (ICP) system used for etching or deposition of Silicon compounds. Compared to regular system, the inductively coupled plasma source enable systems to generate a high-density plasma, which enhances etching/deposition rates and uniformity.

icp-cvd oxford plasmalab1000

In Reactive Ion Etching mode (ICP-RIE), it’s a multipurpose fluorinated and chlorinated based chemistry system used for anisotropic/isotropic etching of silicon, silicon oxide, other dielectric materials, some metals, and III-V semiconductors. The Bosch Process is technically possible. In Chemical vapor deposition mode (ICP-CVD), it switches to a deposition system that allows a fast growth of silicon oxide (SiOx) or nitride (SixNy).

Reservations & Training
Inventory ID:
ENG-N23
Manufacturer:
Oxford Instruments
Model:
PlasmaLab 100
Year Installed:
2012
Categories
DepositionEtching
Section
Engineering
Room Number:
L2 A645b
Open to External Use?:
Yes
Operation:
User/Staff Operated
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Features

ICP power source: up to 3000W at 13.56MHz RF power source: up to 600W at 13.56 MHz Automatic matching on both sources Electrode temperature range: - 5°C to 60°C (Chiller mode) - Up to 300°C (Heater mode) Helium backside cooling for the electrode (10 to 50 mTorr) Process pressure: 2 to 100mTorr Process Gases: Ar, He, N2, N2O, O2, H2, CF4, CH4, C4F8, SF6, SiH4, BCl3 and Cl2

Sample size: from 5x5mm to 4-inch wafer Load lock for sample introduction