ndu FY2012 Annual Report Figure 2
Fig. 2: AFM images of Ta NPs deposited for 20 min on silicon after: (a) in-situ vacuum chamber annealing at 400 degrees Celsius for 30 min, (b) vacuum annealing at 600 degrees Celsius for 30 min, and (c) air annealing at 600 degrees Celsius for 30 min (Singh et al., ICBB, Dec 2012)
Date:
01 March 2024
Copyright OIST (Okinawa Institute of Science and Technology Graduate University, 沖縄科学技術大学院大学). Creative Commons Attribution 4.0 International License (CC BY 4.0).
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